Effect of the Parametric Variations of Semiconductor Screen on Line Parameters and Wave Properties of Underground Cable
Swarnankur Ghosh1, Supriyo Das2
1Swarnankur Ghosh*, Department of Electrical Engineering, National Institute of Technology Meghalaya, Laitumkhrah, Shillong, India.
2Supriyo Das, Department of Electrical Engineering, National Institute of Technology Meghalaya, Laitumkhrah, Shillong, India.
Manuscript received on November 12, 2019. | Revised Manuscript received on November 25, 2019. | Manuscript published on 30 November, 2019. | PP: 5279-5287 | Volume-8 Issue-4, November 2019. | Retrieval Number: D7452118419/2019©BEIESP | DOI: 10.35940/ijrte.D7452.118419
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Detection and understanding of different high frequency phenomenon in multilayered underground (UG) cable require a thorough study of wave propagation mechanism which is governed by the line parameters of the cable. Line parameters are the functions of cable geometric and electromagnetic properties. Therefore the inclusion of semiconducting screen in cable structure influences the line parameters as well as wave properties of the cable. This paper aims to investigate the effects of the variation of different geometric and electrical properties of the semiconducting screen on line parameters as well as wave propagation characteristics of UG cable over a wide range of frequency. The complete impedance matrix of cable considering the effect of the semiconducting screen is derived using loop current analysis without invoking the theory of a double-layered conductor system. A comparative analysis on the effect of parametric variations of the semiconducting screen on line parameters as well as wave properties between the cable with and without semiconducting screen over a wide range of frequency is performed. This analysis indicates that the wave properties like attenuation or phase velocity are considerably influenced by inclusions of the semiconducting screen in cable structure, especially at high frequency.
Keywords: Loop Current, Mesh and Phase Domain, Skin Depth, Attenuation Constant.
Scope of the Article: Exact and Parameterized Computation.