Design of Complementary Metal Oxide Semiconductor Based Three Stage Ring Oscillator on The Basis of Frequency, Leakage Current and Leakage Power with and Without Memristor
Ravinesh Bhadoriya1, Nikhil Saxena2
1Ravinesh Bhadoriya, Research Scholar (VLSI Design) from ITM University (GOI), Gwalior.
2Nikhil Saxena, Assistant Professor in ITM University (GOI) Gwalior in ECE Department.
Manuscript received on 01 March 2019 | Revised Manuscript received on 07 March 2019 | Manuscript published on 30 July 2019 | PP: 5343-5347 | Volume-8 Issue-2, July 2019 | Retrieval Number: B2277078219/19©BEIESP | DOI: 10.35940/ijrte.B2277.078219
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This paper is based on the results obtained from CMOS based three stage ring oscillators with and without using the memristor. After analyzing, the results obtained from memristor based oscillator are better in terms of frequency, leakage current and leakage power. Also, a brief overview about the memristor is given, whose characteristics lies among resistance, inductance and capacitance.
Keywords: CMOS, Leakage Current, Leakage Power, Frequency
Scope of the Article: Microwave Oscillator