Gate Diffusion Input Technique for Power Efficient Circuits and its Applications
Priyanka Tyagi1, S.K. Singh2, Piyush Dua3
1Priyanka Tyagi, Department of ECE, AKTU, Lucknow (U.P), India.
2Dr. S.K. Singh, Department of ECE, ABESEC, Ghaziabad (U.P), India.
3Dr. Piyush Dua, Applied Physics, Petroleum University, Dehradun (Uttarakhand), India.
Manuscript received on 05 August 2019 | Revised Manuscript received on 28 August 2019 | Manuscript Published on 05 September 2019 | PP: 472-477 | Volume-8 Issue-2S7 July 2019 | Retrieval Number: B10890782S719/2019©BEIESP | DOI: 10.35940/ijrte.B1089.0782S719
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In present scenario world become completely digital. In digital devices the speed and life of the battery is the biggest issue .To resolve these problems there are my techniques for design the devices. A low power design technique is Gate Diffusion input (GDI). This review has the study of GDI technique which is most recent research in low power designing field. In this study many paper were reviewed. The review has structure of THE GDI cell, modeling and application. This review also presented the comparison of GDI technique with other technique of designing. The purpose of the study to find out most recent research in field of GDI. From this study we find out this technique mostly used for digital circuits. This review provides the current state of research and future scopes in this field.
Keywords: CMOS, CNTFET, GDI, MGDI, PDP.
Scope of the Article: Low-power design