Temperature Dependence of Quantum Dots-in-Well Infrared Photo Detectors (QDIPs) using Photoluminescence
Noor H Jabarullah
Noor H Jabarullah, Universiti Kuala Lumpur, Malaysia Institute of Aviation Technology.
Manuscript received on 27 June 2019 | Revised Manuscript received on 15 July 2019 | Manuscript Published on 26 July 2019 | PP: 254-259 | Volume-8 Issue-2S2 July 2019 | Retrieval Number: B10450782S219/2019©BEIESP | DOI: 10.35940/ijrte.B1045.0782S219
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: A research of quantity dots-in-well infrared photo detectors (QDIPs) produces helpful outcomes for creating a two-color QDIP. Quantum dot infrared photo detectors (QDIPs) have been shown to be a main technology in mid-and long-wavelength infrared detection owing to their capacity for normal incidence operation and low dark current. This research explores infrared detectors based on intersubband transitions in a novel heterostructure of InAs / In0.15 Ga0.85 As / GaAs quantum dots-in-well (DWELL). The InAs quantum dots are also positioned in an In0.15 Ga0.85 in the DWELL framework, which in turn is well positioned with the In0.1Ga0.9As obstacle in GaAs quantum. Using fourier transform infrared spectroscopy, the optical characteristics of the sample were researched using photoluminescence and photocurrent. Spectrally adjustable reaction was noted at 6.2μm and 7.5μm with prejudice and lengthy wave IR reaction.
Keywords: Photo Quantum Photoluminescence Characteristics Framework.
Scope of the Article: Nano electronics and Quantum Computing