High Isolation of Single Pole Single Throw Switch using Defected Ground Structure
M. H. Abdul Hadi1, B. H. Ahmad2, Z. Zakaria3, N. A. Shairi4
1M. H. Abdul Hadi, Centre for Telecommunication Research & Innovation (CETRI), Faculty of Electronics and Computer Engineering, University Technical Malaysia Melaka (UTEM), Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia.
2B. H. Ahmad, Centre for Telecommunication Research & Innovation (CETRI), Faculty of Electronics and Computer Engineering, University Technical Malaysia Melaka (UTEM), Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia.
3Z. Zakaria, Centre for Telecommunication Research & Innovation (CETRI), Faculty of Electronics and Computer Engineering, University Technical Malaysia Melaka (UTEM), Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia.
4N. A. Shairi, Centre for Telecommunication Research & Innovation (CETRI), Faculty of Electronics and Computer Engineering, University Technical Malaysia Melaka (UTEM), Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia.
Manuscript received on 23 March 2015 | Revised Manuscript received on 30 March 2015 | Manuscript published on 30 March 2015 | PP: 16-21 | Volume-4 Issue-1, March 2015 | Retrieval Number: A1335034115©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In this paper, a high isolation of Single Pole Single Throw (SPST) switch using Defected Ground Structure (DGS) is proposed. A discrete PIN diode was used as switching element in the SPST switch design. First, the resonant frequency of the discrete PIN diode on DGS, which is based on mathematical modeling and circuit simulation is analyzed. The results showed that the resonant frequency of the discrete PIN diode on the DGS was shifted to higher frequency during ON state and was shifted to lower frequency during OFF state. Then, by realizing the SPST switch circuit using FR4 substrate in 1.5 GHz frequency band, the measured result clearly showed that high isolation (>30 dB) of the proposed SPST switch during OFF state was produced by using DGS compared to a SPST switch without DGS.
Keyword: Defected ground structure (DGS), PIN Diode, Resonant Frequency, Isolation, RF Switch, SPST Switch.
Scope of the Article: Frequency Selective Surface