Monte Carlo Simulation of a Uniform Response Silicon X-ray Detector
Sunil Chinnadurai1, Poongundran Selvaprabhu2, Vetriveeran Rajamani3
1Sunil Chinnadurai*, Department of Electronics and Communication Engineering, SRM University-AP, Amaravati, Andhra Pradesh, India. Email:
2Poongundran Selvaprabhu, Department of Communication Engineering, School of Electronics Engineering, Vellore Institute of Technology, Vellore 632014, Tamil Nadu, India.
3Vetriveeran Rajamani, Department of Electronics and Communication Engineering, Nalla Malla Reddy Engineering College, Hyderabad, Telangana, India.
Manuscript received on January 02, 2020. | Revised Manuscript received on January 15, 2020. | Manuscript published on January 30, 2020. | PP: 1305-1313 | Volume-8 Issue-5, January 2020. | Retrieval Number: E6032018520/2020©BEIESP | DOI: 10.35940/ijrte.E6032.018520
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: X-ray semiconductor detectors do not show an equal responsiveness for different incident photon energies. Detector response is required to be independent from the energy especially for dose measurements in medical or nuclear safety applications. So the target of the project is to achieve an energy independent response of the silicon x-ray detector. The active area of the silicon detector is partly covered with a brass plate featuring a round hole with a thin aluminum foil. The diameter has to be optimized to achieve an energy independent response of the detector. Monte Carlo simulation toolkit Geant4 is used to model the structure, matter and physical properties of the device. Silicon detector has a surface area of 10 mm x 10mm and about 500 um thick. Brass plate with thickness of 1.8 mm and round hole is mounted on top of it. X-ray photons with energies in different steps between 50 keV and 150 keV are used in the simulation. Monte Carlo simulation results presented in this report determines the best possible energy independent response of the silicon x-ray detector.
Keywords: Geant4, Monte Carlo simulation, Semiconductor detector, X-rays.
Scope of the Article: Digital Clone or Simulation.