Comprehensive Examination on Resistive Random Access Memory 
K.G.Dharani1, S.Bhavani2, S.Hridya3
1Dr.K.G.Dharani , Associate Professor, Department of ECE, Karpagam Academy of Higher Education, Coimbatore, Tamilnadu, India.
2Dr.S.Bhavani, Professor and Head, Department of ECE, Karpagam Academy of Higher Education, Coimbatore, Tamilnadu, India.
3S.Hridhya, Department of ECE, Karpagam Academy of Higher Education, Coimbatore, Tamilnadu, India.
Manuscript received on November 12, 2019. | Revised Manuscript received on November 25, 2019. | Manuscript published on 30 November, 2019. | PP: 4663-4667 | Volume-8 Issue-4, November 2019. | Retrieval Number: D8398118419/2019©BEIESP | DOI: 10.35940/ijrte.D8398.118419
Open Access | Ethics and Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: With the latest advances in materials science, resistive random access memory (RRAM) devices are attracting non-volatile, low power consumption, non-destructive read, and high density memory. Related performance parameters for RRAM devices include operating voltage, operating speed, resistivity, durability, retention time, device yield, and multi-level storage. Numerous resistive mechanisms, such as conductive filaments, space charge limited conduction, trap charging and discharging, Schottky emission, and pool-Frenkel emission, have been proposed to explain the resistance switches of RRAM devices. Therefore, in this work, different oxide-based random access memories (RRAMs) were provided for comprehensive investigation of neurom or phic calculations. With the development of RRAM, the physical mechanism of conduction, the basic history of neuromorphic calculations begins. Finally, suggestions for future research, as well as waiting for the challenges of RRAM equipment, are given.
Keywords: Resistive Random Access Memory, Resistance Ratio, Endurance, Retention Time and Resistive Switching.
Scope of the Article: Wireless Access Technologies for IoT.