Analytical 2D Modeling of Surface Potential and Threshold Voltage for Lightly Doped Substrate NMOS
Nitin Sachdeva1, Tarun Kumar Sachdeva2
1Nitin Sachdeva*, Electronics Department, J. C Bose University of Science & Technology, YMCA, Faridabad, India.
2Tarun Kumar Sachdeva, Electronics Department, J. C Bose University of Science & Technology, YMCA, Faridabad, India.
Manuscript received on November 17., 2019. | Revised Manuscript received on November 24 2019. | Manuscript published on 30 November, 2019. | PP: 12108-12111 | Volume-8 Issue-4, November 2019. | Retrieval Number: C5320098319/2019©BEIESP | DOI: 10.35940/ijrte.C5320.118419
Open Access | Ethics and Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Reducing the device dimensions leads to scaling of various parameters like junction depth, supply voltage and gate oxide thickness and results to the variation of threshold voltage. Threshold voltage variations can cause serious design problems. So threshold voltage can be adjusted by various ways which is the most important parameter of the MOSFET. This paper depicts the analytical modeling and simulation of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The expression for potential at source and drain ends and threshold voltage has been derived and the theoretical values are compared with simulated values. From simulation results from SILVACO TAD tool, threshold voltage of 0.22V is achieved at a work-function of 4.12eV.
Keywords: MOSFET, NMOSFET, SILVACO, Athena, Atlas, GCA.
Scope of the Article: Data Analytics.