Design of High Stability Factor Lna using Cascade Mosfet at 850MHz Rf Frequency
S.Shiyamala1, M.Sai Ganesh2
1Dr.S.Shiyamala, Associate Professor/ECE, Vel Tech Rangarajan Dr.Sagunthala R&D Institute of Science and Technology, Chennai, TN, India.
2Mr.Sai Ganesh, Pre Final Year, UG Scholar/ECE, Vel Tech Rangarajan Dr.Sagunthala R&D Institute of Science and Technology, Chennai, TN, India.
Manuscript received on 03 August 2019. | Revised Manuscript received on 08 August 2019. | Manuscript published on 30 September 2019. | PP: 8925-8928 | Volume-8 Issue-3 September 2019 | Retrieval Number: C4616098319/2019©BEIESP | DOI: 10.35940/ijrte.C4616.098319
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Controlling noise is the primary effort in any amplifier. LNA (Low Noise Amplifier) will control the noise in front panel of amplifier stage as per FRISS law. Instead of single MOS in LNA , cascaded the MOS generates the stability factor in a better way in 850MHz RF frequency at load impedance of 50Ω. But additionally capacitor inserted cascaded MOS will pull down the stability factor. Cascasded MOS LNA have a stability factor of 1.387 and Noise Figure(dB) of 0.518
Index Terms: LNA, Stability Factor, Cascade MOS, Noise Figure.
Scope of the Article: Frequency Selective Surface