Design and Analyze the Effect of InGaN Nano-Material in Light Emitting Diode towards Improving the Performance of Quantum Efficiency
Shyam Sunder Manaktala1, K.M. Singh2
1Shamsunder Manataklata, Research Scholar, Dept. of Engineering and Communication Engineering, JECRC University, Jaipur, India.
2K M Singh, Professor, Dept. of Engineering and Communication Engineering, JECRC University, Jaipur, India.
Manuscript received on 03 March 2019 | Revised Manuscript received on 08 March 2019 | Manuscript published on 30 July 2019 | PP: 6321-6325 | Volume-8 Issue-2, July 2019 | Retrieval Number: B1096078219/2019©BEIESP | DOI: 10.35940/ijrte.B1096.078219
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The efficiency of an InGaN light-emitting diode (LED) is critically dependent on internal electric field (IEF) exhibiting in its active region. In the present work we examined the properties of the NSSP light emitters. Also we developed a novel InGaN LED structure based on a Nano-structured semi-polar (NSSP) GaN template. This new structure can be fabricated on a mature c-plane substrate including low cost sapphire without any ex situ patterning. From this approach we got results in which we can see that with the help of RT PL, 30% enhancement in IQE will be observed in NSSP MQWs as compared to c-plane planar MQWs with the help of SEM and TEM imaging tools. We have successfully ramped up an MOCVD tool for the epitaxial growth of GaN LEDs for this study.
Keywords: Performance of Quantum Efficiency Present Work.
Scope of the Article: High Performance Concrete