Comparative Study: MOSFET and CNTFET and the Effect of Length Modulation
Kuldeep Niranjan1, Sanjay Srivastava2, Jaikaran Singh3, Mukesh Tiwari4
1Kuldeep Niranjan, M. Tech. Scholar (VLSI), SSSIST, Sehore (M.P.), India.
2Prof. Jaikaran Singh, Professor & Head, Depatment of Electronics and Communication, SSSIST, Sehore (M.P.), Inida.
3Prof. Mukesh Tiwari, Professor & Dean, SSSIST, Sehore (M.P.), Inida.
4Dr. Sanjay Srivastava, Professor, Department of MSME, MANIT, Bhopal (M.P.), India.
Manuscript received on 18 October 2012 | Revised Manuscript received on 25 October 2012 | Manuscript published on 30 October 2012 | PP: 74-78 | Volume-1 Issue-4, October 2012 | Retrieval Number: D0332091412/2012©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Carbon nanotubes (CNTs) provide a number of unique feature and special properties that offers a great promise for nanoelectronic applications. In particular, the high electrical conductivity of quantum wires provides a potential solution for on-chip interconnect metals and transistors of future integrated circuits (IC’s). Carbon nanotubes (CNTs) are envisioned to be used as the basic building blocks in future electronics application due to their excellent electronic properties such as high mobility, compatibility with high dielectric constants (K) and small diameters resulting in advantageous electrostatics. The purpose of this study was to develop a complete current transport model for carbon nanotube field effect transistors (CNT-FETs) applicable in the analysis and design of integrated circuits. The model was derived by investigating the electronic structure of carbon nanotubes and using basic laws of electrostatics describing a field effect transistor. Traditional MOSFET have the limitation after 60nm, So In this paper we theoretically change the channel material of traditional MOSFET with carbon nano tube (CNT) and compare the characteristics parameter. Here we found a great result like as mobility, device size Switching speed, current capacity. We compare the performance of CNTFET and MOSFET with respect to different type of gate material, effective length, and gate to source voltage. The I-V characteristic of the CNTFET is similar to MOSFET
Keywords: Anisotropy, CNT-FET, Lateral Growth Work Function
Scope of the Article: Study and Experience Reports