Design and Analysis of Gate All Around Tunnel FET based Ring Oscillator Circuit
Umesh Dutta1, M. K Soni2, Manisha Pattanaik3
1Umesh Dutta, ECE Department of, FET, Manav Rachna International Institute of Research and Studies, Faridabad, Haryana, India.
2M.K Soni, ECE Department of, FET, Manav Rachna International Institute of Research and Studies, Faridabad, Haryana, India.
3Manisha Pattanaik, ICT Department of, ABV-Indian Institute of Information Technology and Management, Gwalior, M.P, India.
Manuscript received on 07 March 2019 | Revised Manuscript received on 15 March 2019 | Manuscript published on 30 July 2019 | PP: 2415-2420 | Volume-8 Issue-2, July 2019 | Retrieval Number: B1968078219/19©BEIESP | DOI: 10.35940/ijrte.B1968.078219
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In this work, we have designed and simulated a Gate All Around TFET (GAATFET) based 3 stage ring oscillator circuit and compared its performance with the CMOS based counterpart. The results of SPICE simulations indicate that GAATFET based ring oscillator circuit consumes 3.5 times lower power consumption in active mode than CMOS based ring oscillator. However, 0.43 ns and 0.17 ns of propagation delay is observed for GAATFET based ring oscillator and CMOS based ring oscillator circuit respectively. The obtained output waveform frequency for CMOS based ring oscillator is 2.5 times higher than the GAAATFET based ring oscillator. Further, undershoot is also investigated and it is found that the amplitude of undershoot in case of GAATFET based oscillator is roughly 6.5 times more as compared to CMOS based counterpart. The undershoot and delay observed in case of GAATFET based ring oscillator can be over-shaded by the fact that it has lower active power consumption than the CMOS based ring oscillator. Simulation results signify that GAATFET based ring oscillator can be deployed in future low power VLSI circuits and systems.
Index Terms: Tunnel FET, Ring Oscillator, Gate All Around, Low Power, Analog Performance.
Scope of the Article: Low-power design